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Silicon Carbide (SiC) Yakavakirwa paVacuum Chuck yeNzvimbo Dzinopisa Nekupisa Kwakanyanya & Plasma

Silicon Carbide (SiC) Yakavakirwa paVacuum Chuck yeNzvimbo Dzinopisa Nekupisa Kwakanyanya & Plasma

Tsananguro pfupi:

St.Cera's SiC-based ceramic chuck inogadzirwa kubva kusilicon carbide ine purity yakakwira (batch S1111, SiC 99.72%, free Si 0.05%). Inopa simba reflexural rakayerwa re449 MPa, kusimba kwe fracture kwe3.12 MPa·m¹/², uye elastic modulus ye457 GPa. Kupisa kwakajairika kwechinhu ichi (120–150 W/m·K) uye kuwedzera kwekupisa kwakaderera (4.0–4.5×10⁻⁶/℃) zvinogonesa kukurumidza kupisa uye wafer warpage shoma panguva yekupisa. Chuck inogona kugadzirwa sechuck ine porous vacuum (kuyerera kwegesi kwakaenzana) kana chuck yakagadzika. Nekupisa kwakanyanya kwekushandiswa kwe1600–1700°C (isina mutoro) uye kuramba kukuru kweplasma erosion, chuck iyi yakakodzera kugadzirisa wafer yekupisa kwakakwira (annealing, RTP) uye aggressive etch chambers uko alumina chucks inoora.


Ruzivo rweChigadzirwa

Matagi eChigadzirwa

St.Cera's SiC-based ceramic chuck inogadzirwa kubva kusilicon carbide ine purity yakakwira (batch S1111, SiC 99.72%, free Si 0.05%). Inopa simba reflexural rakayerwa re449 MPa, kusimba kwe fracture kwe3.12 MPa·m¹/², uye elastic modulus ye457 GPa. Kupisa kwakajairika kwechinhu ichi (120–150 W/m·K) uye kuwedzera kwekupisa kwakaderera (4.0–4.5×10⁻⁶/℃) zvinogonesa kukurumidza kupisa uye wafer warpage shoma panguva yekupisa. Chuck inogona kugadzirwa sechuck ine porous vacuum (kuyerera kwegesi kwakaenzana) kana chuck yakagadzika. Nekupisa kwakanyanya kwekushandiswa kwe1600–1700°C (isina mutoro) uye kuramba kukuru kweplasma erosion, chuck iyi yakakodzera kugadzirisa wafer yekupisa kwakakwira (annealing, RTP) uye aggressive etch chambers uko alumina chucks inoora.

 

Magadzirirwo(zvichibva pamushumo wekuyedza weSiC S1111 wakapihwa uye kukosha kwakajairika):

Pfuma Kukosha
Zvinhu SiC (99.72% SiC, 0.05% Si Yemahara)
Kuwanda kwevanhu 3.10–3.15 g/cm³
Kunyudzwa kweMvura 0%
Simba reKuchinjika 449 MPa
Kusimba Kwekutyoka 3.12 MPa·m¹/²
Modulus yeElastic 457 GPa
Kuomarara kwaVickers 25–28 GPa
Kufambisa kwekupisa 120–150 W/m·K
CTE (25–1000°C) 4.0–4.5×10⁻⁶/℃
Kupisa Kwekushandisa Kwakanyanya (hapana mutoro) 1600–1700°C
Kureba (kupfuura 300mm) ≤5 μm
Kupedzisa Kwepamusoro Ra ≤0.4 μm (yakamonerwa)

 

Mashandisirwo:

● Kudzikisa ganda zvakanyanya (kupinza, RTP, kukura kwe epitaxial)

● Plasma etch chuck ine simba guru rekudzivirira fluorine

● Kubata wafer yakatetepa nekupisa/kutonhodza kwakafanana

● Chuck ine maburi yekutsigira wafer isingabatanidzi

 

Kugadzira:

SiC sintering → kukuya kwakanyatsojeka kwe flatness uye surface profile → optional porous structure structure (ye vacuum chuck) → lapping → ultrasonic cleaning. Chuck yega yega inoongororwa 100% kuti haina flatness (laser interferometer) uye kuti vacuum yakafanana sei (flow test).

 

Kudzora Hunhu:

● Kutarisa saizi yeCMM (dhayamita, ukobvu, nzvimbo dzemaburi)

● Kuyerwa kwehurefu hwepadenga paASTM

● Kuedza kudonhedza helium (yekushandisa vacuum chucks)

● Kusimbiswa kwesimba reflexural pachikamu chimwe nechimwe (ref. ongororo yekuongorora)

 

Zvakanakira Alumina Chucks:

● Kufambisa kwekupisa kwakanyanya (120–150 vs 32 W/m·K yealumina) – 4× kutamiswa kwekupisa nekukurumidza

● CTE yakaderera (4.0 vs 7.2×10⁻⁶/℃) – inoderedza kushushikana kwekupisa kwewafer

● Kudzivirira kwakanyanya kweplasma - 10 × hupenyu hwakareba mu fluorine etch

● Tembiricha yepamusoro yekushandisa (1600°C vs 800°C yealumina)

 

Kugadzirisa:

● Nzvimbo ine maburi kana ine migero

● Dhayamita 100–450 mm, yakatenderera kana sikweya

● Mhete yekuvhara mupendero kana zvikamu zvekuvhara nzvimbo

● Sarudzo yesimbi yekutsigira simbi yekugadzika kwakasimba

Ruzivo rwese rwemakanika rwuri pamusoro rwunobva mumushumo wekuyedza wakapihwa (batch S1111). Kupisa uye kuomarara kwakajairika kune iyi SiC grade. Machuck eSiC ane maburi anoda kugadziriswa kwakawedzerwa; ndapota bvunzai kana paine maburi chaiwo uye saizi yemaburi.


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