Pamwe chete nezvakanaka zvese zvekushandisa zvechinyakare zveAl2O3 neBeO substrate, Aluminium Nitride (AlN) ceramic, ine high thermal conductivity (monocrystal's theoretical thermal conductivity i275W/m▪k，polycrystal's theoretical thermal conductivity i70~210W/m▪k), low dielectric constant, thermal expansion coefficient inoenderana ne single crystal silicon, uye electrical insulation properties, chinhu chakanakira circuit substrates uye packaging muindasitiri ye microelectronics. Icho chinhu chakakoshawo kune zvikamu zve ceramic zve structural structure high temperature nekuda kwe high temperature mechanical properties, high temperature properties uye chemical stability.
Kuwanda kweAlN mumaonero epfungwa ndeye 3.26g/cm3, kuomarara kweMOHS kuri 7-8, resistivity yekamuri-tembiricha yakakura kupfuura 1016Ωm, uye expansivity yekupisa iri 3.5×10-6/℃ (tembiricha yekamuri ye200℃). Zvidimbu zveAlN zvisina ruvara uye zvinoonekera, asi zvingave nemavara akasiyana-siyana senge grey, grey chena kana yero yakapfava, nekuda kwetsvina.
Pamusoro pekugona kupisa kwakanyanya, AlN ceramics inewo mabhenefiti anotevera:
1. Kudzivirira kwemagetsi kwakanaka;
2. Kuwanda kwekupisa kwakafanana nesilicon monocrystal, kupfuura zvinhu zvakaita seAl2O3 neBeO;
3. Simba guru remakanika uye simba rakafanana rekuchinjika neAl2O3 ceramics;
4. Kurasikirwa kwepakati nepakati kwe dielectric constant uye dielectric;
5. Zvichienzaniswa neBeO, kufambiswa kwekupisa kweAlN ceramics hakunyanyi kukanganiswa nekupisa, kunyanya pamusoro pe200℃;
6. Kudzivirira kupisa kwakanyanya uye kuramba ngura;
7. Hazvina chepfu;
8. Inoshandiswa muindasitiri ye semiconductor, indasitiri yemakemikari esimbi uye mamwe maindasitiri.
Nguva yekutumira: Chikunguru-14-2023